A New Analog Behavioral SPICE Macro Model with Thermal and Self-Heating effects for Silicon Carbide Power MOSFETs
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 8Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Bazzano, Gaetano; Cavallaro, Daniela Grazia; Greco, Rosario; Raffa, Alessandra; Veneziano, Pier Paolo (STMicroelectronics, Italy)
Abstract:
Self-heating effects in Silicon Carbide Power MOSFETs have been incorporated into a behavioural SPICE model. It contains a dynamic link between electrical and thermal components which allows a good prediction of DC and AC variation due to temperature in the range of the component. It allows estimating the junction-temperature when the device works in the power application. Simulation results on a STMicroelectronics SiC MOSFET will close the paper.