Analysis of SiC-MOSFETs utilised in Hard Switching Inverter Topologies with Switching Frequencies up to 1 MHz

Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2015

Pages: 8Language: englishTyp: PDF

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Fahlbusch, Sebastian; Mueter, Ulf; Hoffmann, Klaus (Helmut Schmidt University, Germany)

Due to their low specific on-resistance and low intrinsic capacitances silicon carbide power MOSFETs enable a significant increase of switching frequencies in power electronic applications in a voltage range of Vdc = 600 V, in which IGBTs are predominantly used. The objective of this analysis is to evaluate the potential of SiC-MOSFETs to increase the switching frequency in such applications. The suitability for high frequency power applications is analysed by exemplarily determining the individual maximum switching frequencies of four SiC-MOSFETs in a hard switching inverter half-bridge at Vdc = 600 V and an effective output current of Iload = 10 A.