Snubber circuit to suppress the voltage ringing for SiC device
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 6Language: englishTyp: PDF
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Authors:
Joko, Motonobu; Goto, Akiko; Hasegawa, Maki; Miyahara, Satoshi; Murakami, Haruki (Mitsubishi Electric Corp., Japan)
Abstract:
In these days, SiC device is expected to improve the efficiency of power electronics application because of very low switching energy. However, the voltage ringing caused by high speed switching makes EMC problem for the system. In general, this voltage ringing could be suppressed by selecting a high gate resistance in the gate driver. On the other hand, this would cause higher switching energy and thus the SiC’s advantage would be spoiled. This paper presents C-CR snubber circuit that makes it possible to suppress the voltage ringing without increasing the semiconductor’s switching energy.