Analysis of Reverse-Recovery Behaviour of SiC MOSFET Body-Diode – regarding Dead-Time
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Horff, Roman; Maerz, Andreas; Bakran, Mark-M. (Department of Mechatronics, Center of Energy Technology, Universitätsstr. 30, 95447 Bayreuth, Germany)
Operating a SiC-MOSFET in an inverter phase leg will result in using it in the reverse direction. As the parasitic pn-diode shows a non-favourable characteristic, the aim of this paper is to increase the performance by minimizing the dead-time between the opposite MOSFETs, thus trying to eliminate the bipolar diode effect. The effect on the reverse recovery and the overvoltage was investigated depending on current and temperature. A dead-time providing minimum losses could be identified.