High Frequency SiC Majority Carrier Modules
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 7Language: englishTyp: PDF
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Authors:
Temple, Vic; Waldron, John; Azotea, James (Silicon Power Corporation, 958 Main St, Clifton Park, NY 12065, USA)
Francois, Michel (ARL, Navigation R&D Center, PSU 995 Newtown Rd. Warminster, PA 18974, USA)
Rodrigues, Rogerio (Global Foundries, 400 Stone Break Ext, Malta, NY 12020, USA)
Abstract:
We report a TARDEC-funded module design and build process based on our thinPak that is ideally suited to the challenges majority carrier SiC power devices introduce. Our ultra-compact (2cu.in.) 1200V, 300A half bridge is based on enhancement mode 1200V JFETs fabricated by SemiSouth. However the technology and experience are also directly applicable to SiC MOSFETs. Silicon Power’s technology allowed for up to (16) 2.25x4mm SiC JFETs and (8) 4x4mm SiC Schottky diodes to be packaged in parallel and used as a building block for a ½ bridge module. These modules exhibited turn-on and turn-off losses totaling about 10mW at 600V and 300A with fall times of only 150ns.