Dual side cooling package DSOP Advance: Thermal conductance innovation for Power-MOSFET

Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2015

Pages: 5Language: englishTyp: PDF

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Miyakawa, Takeshi; Nishiwaki, Tatsuya; Hokomoto, Yoshitaka; Kaganoi, Keisuke; Kameda, Mitsuhiro; Fukui, Takeshi; Tamura, Koji (Toshiba Corporation Semiconductor & Storage Products Company, 300, Ikaruga, Taishi-cho, Ibo-gun, Hyogo 671-1595, Japan)
Muratsu, Hiroyuki (Kaga Toshiba Electronics Corp., 1-1, Iwauchi-machi, Nomi-Shi, Ishikawa 923-1293, Japan)
Inoue, Yoshiaki; Iwasaki, Naofumi (Toshiba Discrete Semiconductor Technology Corp., 300, Ikaruga, Taishi-cho, Ibo-gun, Hyogo 671-1595, Japan)
Tchouangue, Georges (Toshiba Electronics Europe GmbH, Hansaallee 181, 40549 Düsseldorf, Germany)

A new MOSFET package called DSOP Advance (Dual Side Cooling SOP 5x6mm) has been developed. That device features an innovative thermal conductance with dual side cooling realized by using a Copper (Cu) plate on the bottom and on the top package surface. Compared with the single side cooling package structure, the thermal resistance (Rth) could be reduced by 26% and the avalanche energy could increase as well due to the thermal conductance improvement. Also, a 25% reduction of the package electrical resistance could be achieved, due to the conductive path cross-sectional area increase.