Correlation between Chip Metallization Properties and the Mechanical Stability of Heavy Cu Wire Bonds
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 8Language: englishTyp: PDF
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Authors:
Gross, David; Haag, Sabine; Reinold, Manfred (Robert Bosch GmbH, Robert-Bosch-Campus 1, 71272 Renningen, Germany)
Schneider-Ramelow, Martin (Fraunhofer IZM, Gustav-Meyer-Allee 25, 13355 Berlin, Germany)
Lang, Klaus-Dieter (Technische Universität Berlin, Gustav-Meyer-Allee 25, 13355 Berlin, Germany)
Abstract:
Ultrasonic wire-bonding with 300micrometer thick Cu wires is carried out on different Cu bond pads on both Si and thermally oxidized Si chips. The hardness of the Cu metallization and the adhesion strength on the substrates is related to the bonding performance and shear test results. Annealing of the chips prior to the bonding process is carried out at different temperatures which significantly reduces the bond pad hardness. Electron-backscatter diffraction results show the corresponding high deformation of Cu pads annealed at 400 °C due to the bonding process.