Slew rate control of discrete IGBT and CoolMOS reaches targets far beyond the gate resistor regime
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 8Language: englishTyp: PDF
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Authors:
Frank, Wolfgang (Infineon Technology AG, Germany)
Abstract:
The control of power semiconductors with respect to turn-on is usually a matter of the gate resistance selection. This paper proposes a different way of gate turn-on by utilizing a current source, which charges the gate structure of MOS-controlled power transistors with a constant current. This results in an improved controllability towards slower turn-on in terms of di/dt. Double-pulse measurements show the behavior during turn-on of a selected reverse conducting IGBT and a CoolMOS transistor with fast body diode. The results are compared to a standard gate driver including various gate resistors.