Minibloc SiC-MOSFET in a resonant Half-Bridge Inverter operating in the MHz-Range
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 7Language: englishTyp: PDF
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Authors:
Denk, Fabian; Haehre, Karsten; Kling, Rainer; Heering, Wolfgang (Karlsruhe Institute of Technology (KIT) – Light Technology Institute (LTI), Engesserstr. 13, 76131 Karlsruhe, Germany)
Abstract:
Silicon carbide (SiC) power semiconductors allow medium-frequency converters to achieve higher output power and efficiency levels. Some applications require a converter that switches in the MHz-range. In this case only soft-switching topologies are applicable. We present a halfbridge inverter that provides zero voltage switching (ZVS) using a series resonant tank. Further reduction of the switching losses is reached by additional parallel snubber capacitors. The use of new IXYS IXFN50N120SiC MOSFETs in minibloc package enable switching frequencies up to 1.66 MHz at an output power higher than 3 kW and efficiencies of η = 94 %.