High Performance 7th Generation Chip Installed Power Module for EV/HEV Inverters
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 6Language: englishTyp: PDF
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Authors:
Nakata, Yosuke; Ishihara, Mikio; Miyamoto, Noboru; Hussein, Khalid; Godo, Shinsuke (Mitsubishi Electric Corp. Power Device Works, Fukuoka, Japan)
Radke, Thomas; Honsberg, Marco (Mitsubishi Electric Europe B.V., Ratingen, Germany)
Abstract:
This paper presents a high performance power module series (J1-Series), which is equipped with next generation ultra-thin chip technology. The 7th generation IGBT is having an optimized VCE(sat) - Eoff trade-off characteristic. For inverter operation, the 7th generation diode as the Free Wheel Diode (FWD) is finely tailored to have an optimized triangular trade-off characteristic between VF, Err, and reverse recovery softness. Additionally, two specific technologies, that is wire-bond-less Direct Lead Bonding (DLB) structure and direct cooling structure with an integrated water-cooled Al fin, are applied to address major requirements of high power-density, low loss, and high reliability for Electric and Hybrid Electric (EV/HEV) power-train inverter applications. The combination of DLB structure and these latest generation chips successfully achieved high efficiency inside a compact module with high power handling capability.