Breakdown of gate oxide of 1.2 kV SiC-MOSFETs under high temperature and high gate voltage
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 8Language: englishTyp: PDF
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Authors:
Beier-Moebius, Menia; Lutz, Josef (Professorship of Power Electronics and EMC, Technische Universität Chemnitz, Germany)
Abstract:
This work analyzes the onset of gate oxide breakdown of different discrete 1.2 kV SiC MOSFETs for different gate voltage steps. The devices were tested at the same high temperature and the gate voltage was increased step by step. The research on this breakdown distribution is necessary to prove if SiC MOSFETs can fulfill the same reliability requirements for power electronic devices, which are also applicable for current IGBTs.