Benchmarking of SiC JFET and SiC MOSFET modules for the application in medium power traction converters
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 8Language: englishTyp: PDF
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Authors:
Maerz, Andreas; Horff, Roman; Bertelshofer, Teresa; Bakran, Mark-M. (University of Bayreuth, Department of Mechatronics, Center of Energy Technology, Universitätsstr. 30, 95447 Bayreuth, Germany)
Helsper, Martin (Siemens AG, Vogelweiherstr. 1-15, 90441 Nuremberg, Germany)
Abstract:
In this paper the behaviour of a SiC JFET power module is being analysed and the impact of its bodydiode behaviour on the performance of the SiC JFET is compared to a SiC MOSFET and a state of the art IGBT. Second it will be discussed how a low inductance DC-Link affect the dynamic losses of the JFET and whether the SiC JFET can benefit from a low inductance setup.