eGaN® FET based 6.78 MHz Differential-Mode ZVS Class D AirFue(exp TM) Class 4 Wireless Power Amplifier
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 8Language: englishTyp: PDF
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Authors:
Rooij, Michael de; Zhang, Yuanzhe (Efficient Power Conversion Corporation, 909 N. Sepulveda Blvd. ste230, El Segundo CA, 90245, USA)
Abstract:
The ongoing evolution of highly resonant wireless power solutions, enabled by eGaN FETs, continues in this paper where a 33 W capable AirFuel compatible Class 4 power amplifier is presented. As the wireless power levels and charge surface areas increase, so do the design challenges. A 10 W eGaN FET zero voltage switching (ZVS) class D amplifier has been demonstrated as being capable of driving the entire AirFuel Class 2 impedance range without additional circuitry. Unfortunately, given the large increase in impedance range for AirFuel Class 4 systems, this may no longer be possible. This paper delves into the many challenges faced to realize a Class 4 wireless power amplifier solution that include, device thermals, device voltage limits, device selection, impact of timing, and design of support circuitry on the performance of the amplifier and devices. An experimental system is tested and the results show that despite the higher current and power levels, eGaN FETs continue to make inroads into realizing highly resonant loosely coupled wireless power solutions.