Monolithic GaN-on-Si Half-Bridge Circuit with Integrated Freewheeling Diodes
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 7Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Wespel, Matthias; Mikulla, Michael; Quay, Ruediger; Ambacher, Oliver (Fraunhofer-Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany)
Abstract:
This work presents the design, realization, and the characterization of a monolithic GaN-on-Si half-bridge circuit with integrated Schottky contacts as freewheeling diodes. The extrinsic- and intrinsic- layouts are realized, analyzed, and compared to other approaches. The high- and low-side switches feature an off-state voltage of 600 V, an on-state resistance of 120 mOmega, and a reverse resistance of below 150 mOmega at corresponding drain currents of 30 A. Furthermore, the switches achieve very low gate-charges of below 5 nC and reverse recovery charges of 12 nC. The on-state- and reverse-state-performances are benchmarked against other state-of-the-art power devices and compared to the theoretical limits.