nHPD2 (next High Power Density Dual) with next generation chip suitable for low internal inductance package
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 7Language: englishTyp: PDF
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Authors:
Kawase, Daisuke; Nagashima, Kazuhito; Hirayama, Tomohisa; Azuma, Katsunori; Hayakawa, Seiichi (Hitachi Power Semiconductor Device, Ltd., Japan)
Saito, Katsuaki (Hitachi Europe Ltd. Power Device Division, UK)
Abstract:
In order to take full advantage of a Wide Band Gap (WBG) semiconductor device, it is essential to reduce the total stray inductance of a power circuit. Hitachi recently developed a low internal inductance package named “next High Power Density Dual” (nHPD2). The package achieved a drastically lower internal inductance. A 75% reduction compared with an equivalent conventional high power package. On the other hand, the next generation package requires next generation IGBTs suitable for low internal inductance switching, realizing both low loss and an adequate control of dV/dt. In this paper the effects of next generation reduced feedback capacitance IGBTs in nHPD2 are introduced. Furthermore, the resulting benefits of SiC FWD in nHPD2 combined with the next generation small feedback capacitance IGBT are explored.