Durable Design of the New HVIGBT Module

Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2016

Pages: 7Language: englishTyp: PDF

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Authors:
Tanaka, Nobuhiko; Kitamura, Shuichi; Ota, Kenji; Iura, Shinichi; Nakamura, Keiichi (Mitsubishi Electric Corporation, 1-1-1 Imajukuhigashi, Nishi-Ku, Fukuoka, Japan)
Wiesner, Eugen; Thal, Eckhard (Mitsubishi Electric Europe B.V., Germany)

Abstract:
Power semiconductors installed in high-reliable applications must maintain a certain quality in the field for periods up to thirty years. Using our proven high quality design approach, we developed a new High Voltage (HV) IGBT module (HVIGBT) called the X-Series. Based on realistic environmental conditions its robustness was verified to minimize the field failures. In this paper, we describe those design characteristics of the X-Series which are not generally indicated in the datasheets.