Cosmic Ray Failure Mechanism and Critical Factors for 3.3kV Hybrid SiC Modules
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 7Language: englishTyp: PDF
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Authors:
Nitta, Tetsuya; Sakiyama, Yoko; Kotani, Raita; Inoue, Tomoki; Ohara, Ryoichi; Sano, Kenya; Yamaguchi, Masakazu (Toshiba Corporation, Japan)
Tchouangue, Georges (Toshiba Electronics Europe GmbH, Germany)
Abstract:
The cosmic ray failure mechanism for a 3.3kV IGBT has been investigated. It could be clarified that the dynamic avalanche current dominates the catastrophic self-heating, and the impact of the parasitic bipolar action is negligible for a 3.3kV IGBT unlike a lower voltage class IGBT. For practical use, the integral over the electric field with a specific threshold value was proposed as an index for the robustness for a High Voltage (HV) IGBT such as a 3.3kV class device. The cosmic ray robustness of a 3.3kV SiC Schottky Barrier Diode (SBD) was also investigated: it was found that the failure rate is almost the same as that of 3.3kV class Si devices.