A performance comparison of a 650 V Si IGBT and SiC MOSFET inverter under automotive conditions
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 8Language: englishTyp: PDF
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Authors:
Bertelshofer, Teresa; Horff, Roman; Maerz, Andreas; Bakran, Mark-M. (University of Bayreuth, Department of Mechatronics, Center of Energy Technology, Universitätsstr. 30, 95447 Bayreuth, Germany)
Abstract:
This paper researches the performance benefits of replacing the Si IGBTs and Si PIN-diodes of a 650 V/ 100 kW 3-phase power module for automotive drives with SiC MOSFETs. For this purpose the maximum current density of the devices and their losses during a load cycle are evaluated. It will be shown, how much the chip area and the power losses, especially under partial load, can be reduced by substituting the Si power semiconductors with the SiC MOSFETs.