High power, high frequency gate driver for SiC–MOSFET modules
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 7Language: englishTyp: PDF
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Authors:
Koenigsmann, Gunter; Herzer, Reinhard; Buetow, Sven; Rossberg, Matthias (SEMIKRON Elektronik GmbH & Co. KG, Sigmundstr. 200, 90431 Nuremberg, Germany)
Abstract:
A high power, high frequency gate driver with high integration density using ASICs allowing to drive very low inductive 1200 V, 400 A SiC-MOSFET half bridge modules in both-side sinter technology (SKiN) is presented for the first time. Because of its low propagation delay, low dead times and very strong output stages of Ipeak = +40/-78 A, the driver is excellently suited to switch the 400 A MOSFETs with a switching frequency up to 200 kHz with extremely low switching losses and low overvoltages.