Highly robust 1700V diodes fabricated on 8” line using optimized proton implanted buffer
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 5Language: englishTyp: PDF
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Authors:
Ke, Maolong; Luo, Haihui; Deviny, Ian; Dai, Xiaoping; Huang, Jianwei; Liu, Guoyou (Power Semiconductor R&D Centre, CSR Times Electric Co., Ltd., Doddington Road, Lincoln, UK)
Abstract:
Migrating high power device production from 6” to 8” wafers can significantly reduce unit cost. However, for 1700V freewheeling diodes, it is not practical to continue using the diffused buffer on 8” wafer production line as it has been the norm for 6” wafer production line. This is because much thicker starting wafers are typically used in 8” production line for frontside processing due to the requirement of mechanic stability. Therefore, very large thermal budget would be required to produce a very deep buffer for 8” wafer, leading to significant wafer bow, breakage and cost. Therefore an alternative method of producing sufficiently strong buffer has to be found.