Experimental results of a Large Area (91mm) 4.5kV “Bi-mode Gate Commutated Thyristor” (BGCT)
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 7Language: englishTyp: PDF
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Authors:
Stiasny, Thomas; Arnold, Martin; Rahimo, Munaf; Vobecky, Jan; Kaehr, Christian; Hoffmann, Norbert (ABB Switzerland Ltd., Semiconductors, Lenzburg, Switzerland)
Vemulapati, Umamaheswara Reddy (ABB Switzerland Ltd., Corporate Research, Baden-Dättwil, Switzerland)
Abstract:
In this paper, we present the experimental results of the 91mm, 4.5kV Bi-mode Gate Commutated Thyristor (BGCT). The BGCT is a new type of Reverse Conducting Integrated Gate Commutated Thyristor (RC-IGCT) [1]. In this work, we have also compared the results of the BGCT with that of the 91mm, 4.5kV conventional RC-IGCT both electrically (i.e. on-state and turn-off characteristics) and thermally (i.e. temperature distribution during the conduction of the device). The experimental results show that the BGCT has a better technology curve, improved safe operation area, soft reverse recovery behavior and lower leakage current compared to conventional RC-IGCT. The thermal simulation results performed with Abaqus show that BGCT has a better thermal distribution i.e. more uniform temperature distribution throughout the wafer in both GCT- and diode-modes of operation.