Effect of Self Turn-ON during turn-ON of HV-IGBTs
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 8Language: englishTyp: PDF
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Authors:
Muenster, Patrick; Lexow, Daniel; Eckel, Hans-Guenter (University of Rostock, Germany)
Abstract:
During the turn-ON of a high-voltage IGBT a Self Turn-ON can be observed, which is analysed in this paper. This positive feedback, which has not been observed in HV-IGBTs before, is caused by a Self-Charging Displacement Current. This effect influences the turn-ON process and can lead to oscillations of the gate-emitter voltage. The results are based on high-voltage measurements on single-chip modules and semiconductor simulations.