New High Power 3.3kV/1500A IGBT Module Packaging
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 7Language: englishTyp: PDF
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Authors:
Li, Daohui; Zhou, Wei; Qi, Fang; Packwood, Matthew; Wang, Yangang; Jones, Steve; Dai, Xiaoping (Power Semiconductor R&D Center, Dynex Semiconductor Ltd, Lincoln LN6 3LF, UK)
Abstract:
High power IGBT modules have been widely utilised in modern power electronics applications, i.e. traction, renewable energy, electrical vehicle and other industry application areas. A 3.3kV/1500A IGBT module with 140mmX190mm footprint is one of the key standard module packages that have been widely used. In this paper, a new internal design and assembly process have been applied during the development of the high power IGBT module package. A newly designed 3D busbar-substrate assembly has >40% lower inductance than the traditional 2D structural busbars, and ohmic losses from both metal busbars and metal layer of substrates are much lower for the new design. The pre-bent 3D busbars and ultrasonic welding (USW) processes provide better reliability than the usual busbars based on soldering process. During the development of the module package, different 3D finite element method (FEM) simulation packages have been utilised to verify the component design and optimise the overall design with respect to electromagnetic, electrical, thermal/mechanical aspects.