The LinPak high power density design and its switching behaviour at 1.7 kV and 3.3 kV
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 8Language: englishTyp: PDF
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Authors:
Hartmann, Samuel; Fischer, Fabian; Baschnagel, Andreas; Beyer, Harald; Schnell, Raffael; Treier, Christian (ABB Switzerland Ltd., Semiconductors, Fabrikstr. 3, 5600 Lenzburg, Switzerland)
Abstract:
The LinPak IGBT power module is designed to meet the requirements of demanding high power applications. Robust switching behaviour is shown experimentally on a set-up with only 20 nH of commutation loop inductance. The resulting overvoltage at IGBT turn-off stays far below the module’s voltage rating, which makes the LinPak suited for fast switching chip sets with low losses. Several design variants are discussed considering possible current rating and module reliability. Further a method is proposed for estimating the chips’ temperature from the reading of the LinPak’s integrated NTC temperature sensor.