High Power IGBT Module with New AlN Substrate
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 8Language: englishTyp: PDF
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Authors:
Nogawa, Hiroyuki; Hirao, Akira; Nishimura, Yoshitaka; Tamai, Yuuta; Momose, Fumihiko; Saito, Takashi; Mochizuki, Eiji; Takahashi, Yoshikazu (Fuji Electric)
Abstract:
This paper presents the packaging technologies for high power insulated gate bipolar transistor (IGBT) module which applied new thin aluminum nitride (AlN) insulated substrates with high heat dissipation and reliability to achieve higher power density. To apply new thin AlN insulated substrates to the high power IGBT module, we developed thin AlN ceramic substrate with high strength for higher reliability in thermal cycle test. In addition, applying the terminal with high current capability and reliability is necessary for high power IGBT module. For the purpose of that, the ultrasonic copper welding technology for AlN insulated substrates are developed. These technologies lead to increase the output power density compared to the conventional packaging technologies of high power modules.