Reliability Investigation on SiC BJT Power Module
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 9Language: englishTyp: PDF
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Authors:
Otto, Alexander; Rzepka, Sven (Fraunhofer ENAS, Germany)
Kaulfersch, Eberhard (Berliner Nanotest und Design GmbH, Germany)
Frankeser, Sophia (Technische Universität Chemnitz, Germany)
Brinkfeldt, Klas (Swerea IVF AB, Sweden)
Zschieschang, Olaf (Fairchild Semiconductor GmbH, Germany)
Abstract:
In this paper reliability investigation results for a power module fully based on silicon carbide (SiC) devices are presented. The module comprises four SiC bipolar junction transistors (BJT) and four SiC diodes in half-bridge configuration and is part of a newly developed 3-phase inverter for construction vehicles as well as for passenger car applications. The reliability investigations include electro-thermal and thermo-mechanical finite element simulations as well as power cycling tests with subsequent failure analyses. Furthermore, a double-sided cooling approach for the SiC BJT power module will be described and its thermal performance compared to the single-sided cooling version.