Optimisation of Shunt Resistors for Fast Transients

Abstract:
The development of fast power semiconductors increases the requirements for current sensors. Due to the higher switching frequencies and the higher gradients of the current and voltage transients, the capacitive and inductive coupling can affect the measurement signal considerably. The requirements increase especially in the characterisation process, but also for mass applications of fast semiconductors. In addition, some current sensor types introduce an inductance into the load circuit, which affects the switching process and, thus, has to be avoided. Therefore, the aim is to build a shunt with a minimum inductance and a high signal fidelity simultaneously.