An Insightful Evaluation of a 650V High-Voltage GaN Technology in Cascode and Stand-Alone Transistors
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 8Language: englishTyp: PDF
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Authors:
Roig, Jaume; Gomez, German; Declercq, Frederick; Bauwens, Filip (ON Semiconductor, Belgium)
Fernandez, Manuel; Lamar, Diego G. (Universidad de Oviedo, Spain)
Abstract:
A switching performance comparison between 650V power transistors is carried out in this work by assembling identical GaN DHEMTs as Stand-Alone (GaN-SA) and Cascode (GaN-CS) in TO-220 and SMD packages. To our knowledge, this is the first time that this comparison is reported using identical DHEMTs. Our investigations are focused on hard-switching measurements also including best-in-class Super-Junction MOSFETs. It is experimentally proven that, after proper GaN-CS optimization, waveform ringing and power loss are significantly reduced with respect to a previous GaN technology. Additional physicsbased simulations help to elucidate power loss mechanisms, identify key parameters and define suitable operation conditions.