Static Characterization of Discrete State-of-the-Art SiC Power Transistors
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 7Language: englishTyp: PDF
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Authors:
Meisser, Michael; Demattio, Horst; Blank, Thomas (Institute for Data Processing and Electronics (IPE), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany)
Abstract:
Silicon carbide transistors in TO247 packages are wide-spread despite of their limitations regarding parasitic inductance and power dissipation if an electrically insulated heat-sink attach is required. This paper publishes a comprehensive study on the static performance of commercially available SiC discrete transistors. The devices were characterized using a thermally controlled heat sink emulator and precision electrical measurement equipment. The device-specific differences regarding the RDSon stability with regard to current and temperature in forward as well as in reverse operation were investigated.