Analytical Losses Model for SiC semiconductors dedicated to optimization operations
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 9Language: englishTyp: PDF
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Authors:
Dadanema, Gnimdu (Laboratoire SATIE, 41 Avenue du Général Wilson, 94235 Cachan, France)
Costa, Francois (Université Paris-Est SATIE-CNRS Cachan, France)
Avenas, Yvan; Schanen, Jean-Luc (G2ELab, 21 avenue des Martyrs, 38031 Grenoble, France)
Vollaire, Christian (Laboratoire AMPERE, 36 avenue Guy de Collongue, 69134 Ecully, France)
Abstract:
A detailed analytical losses model prediction dedicated to wide band gap components (SiC, GaN) but also valid for silicon devices is presented. The methodology proposed in this paper is based on switching waveform analysis and do not need any measurement data. Furthermore, this model can easily be used in an optimization process due to its low complexity level. Prior to the losses model development we quickly present a wide band-gap modeling tool that can be used to create a compact model of power MOSFETs and power diodes. The methodology has been demonstrated for Cree Inc. power MOSFET C2M0080120D and Schottky diode C4D20120D.