State-of-the-art of HF Soft Magnetics and HV/UHV Silicon Carbide Semiconductors
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 10Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Ohodnicki, Paul (National Energy Technology Laboratory, USA)
Leary, Alex; McHenry, Michael E. (Carnegie Mellon University, USA)
Filho, Faete; Nojima, Geraldo (Eaton Corporation, USA)
Hefner, Allen (National Institute of Standards and Technology, USA)
Abstract:
The post silicon era has begun with the introduction of wide bandgap semiconductors. Among wide bandgap semiconductors being researched, Silicon Carbide (SiC) has been shown so far as the best candidate to high power and high voltage applications. SiC have a superior performance compared to its counterpart (Si) and this brings new challenges to vital ancillary components such as transformers, inductors, drivers as well as addressing issues such as leakage, clearance, EMI and material challenges. A particular challenge for the magnetics components are increasing demands being placed upon higher operational frequency and higher operational temperature conditions. This paper briefly discusses the current status of high voltage SiC devices and soft magnetic materials and cores for high power and high frequency (1-50kHz) applications comprised of amorphous and nanocrystaline nanocomposite alloys.