ST SiC MOSFETs in 1MHZ DC-DC converter
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 5Language: englishTyp: PDF
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Authors:
Abbatelli, Luigi; Catalisano, Giuseppe (STMicroelectronics, Stradale Primosole, 50, 95121, Catania, Italy)
Abstract:
Wide-bandgap semiconductors are semiconductor materials that permit devices to operate at much higher voltages, frequencies and temperature than conventional semiconductor materials. Hence WBG devices allow more power conversion solution to be built which are cheaper and more energy efficient. Today power electronics experts know that 1200V SiC MOSFET can replace 1200V silicon IGBTs allowing frequency range enlargement up to dozens of kHz. What will happen in the power conversion field if new SiC MOSFET technologies, featuring extremely low RDS(on)xQg Figure-of-Merit, will be released into the market? In the present work the SiC MOSFET potential to afford very-high-frequency power conversion (up to 1MHz) will be investigated by looking at the results of the latest ST SiC devices. The analysis will be carried out also by comparing ST SiC MOSFET different tradeoff solutions able to sustain very high switching frequency values.