Isolated gate driver for high current/ high speed FET-Converters
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 8Language: englishTyp: PDF
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Authors:
Kapaun, Florian; Marquardt, Rainer (Universität der Bundeswehr München, Germany)
Abstract:
Expanding the power of FET-based converters from several ten to more than 100kW presents an interesting development trend. Major advantages, aimed at, are ultra low loss, increased switching frequencies and a higher level of integration. For semiconductors in the voltage class up to 650V, PCB-based converters with ”all components on board” become feasible. Minimized board space and high reliability are enforcing the application of integrated circuits for gate drive and auxiliary power supply. True galvanic isolation of these components is desirable, too, in order to enable clean and fast switching of the power devices. A gate drive concept, suitable for fast switching of many paralleled chips, using IC-level [1] transformers is presented. It makes use of a new power boost circuit in order to overcome the limited power range of the integrated (IC-level) transformers.