Simple Gate-boosting Circuit for Reduced Switching Losses in Single IGBT Devices
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 6Language: englishTyp: PDF
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Authors:
Hochberg, Martin; Sack, Martin; Mueller, Georg (Karlsruhe Institute of Technology, Institute for Pulsed Power and Microwave Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany)
Abstract:
Rise and fall time of current and voltage across an IGBT determine the switching losses under hard switching conditions. Due to parasitic inductances in the gate drive circuit and the device leads, gate charging is delayed and hence switching speed is limited. The simple gate-boosting circuit under investigation enables fast charging of the gate capacitance by applying 80V external gate drive voltage while not exceeding the specified maximum voltage across the internal gate capacitance. Under hard switching conditions at a collector current of 80% of the maximum rated pulse current, reduction of turn-on speed and turn-on losses in the order of 90% could be achieved.