The Optimized Gate Driver Design Techniques for IGBT Properties and Downsizing in Eco-Friendly Vehicle
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 8Language: englishTyp: PDF
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Authors:
Jeong, KangHo; Lee, KiJong; Jang, JiWoong; Shin, SangChul; Jang, KiYoung; Jung, JinHwhan (Hyundai Motor Company, Republic of Korea)
Abstract:
The three-phase PWM inverter, which is used for eco-friendly vehicles, requires following fea tures such as low power conversion loss, high fault protection reliability and downsizing. The gate drive unit to operate IGBT (Insulated Gate Bipolar Transistor) module of the inverter is the important component which is developed to operate these properties. In this paper, optimized gate drive unit design techniques are presented. First, the over-current protection technique with temperature compensation is proposed to reduce inverter switching loss for increasing the efficiency of the PWM inverter. After then, the separate protection methods to enhance the protection reliability of IGBT module are described in any abnormal conditions. At last, the power supply circuit design of gate drive unit contributing to downsize inverter is presented.