SiC Improves Switching Losses, Power Density and Volume in UPS
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 8Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Epp, Nikolai; Schulte-Overbeck, Christian; Cao, Zhiyu; Lemke, Michael; Heinemann, Lothar (AEG Power Solutions GmbH, Emil-Siepmann-Str.32, 59581 Warstein, Germany)
Abstract:
The state-of-the-art transformerless uninterruptible power supplies (UPS) for the power rating from 50 kVA to hundreds of kVA are with silicon IGBT technology. In order to achieve high efficiency and good power quality, 3-level topology is state-of-the-art. Thanks to the significantly reduced switching losses of silicon carbide (SiC) semiconductors and the availability of high-current SiC metal-oxide-semiconductor field-effect transistor (MOSFET) module, a SiC-based UPS solution is more and more attractive for this power range. In this contribution a comparative study of Si-based and SiC-based UPS is presented first. For characterizing the new component, a test setup is developed. The test results, open issues and future works are discussed.