Application Advantages and Disadvantages of Modern Fast Switching MOSFETs in VRM
Conference: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2016 - 05/12/2016 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2016
Pages: 8Language: englishTyp: PDF
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Authors:
Chen, Zhiyang; Starks, Ann (ON Semiconductor, USA)
Abstract:
Advancements in integrated MOSFET silicon and packaging technologies have increased switching speed and improved over-all system performance for VRM applications. However, fast-switching can also lead to voltage overstress and an increased dv/dt and di/dt turn-on susceptibility that previously was not as prominent a concern. VRM application advantages and disadvantages associated with fast switching are analyzed, and methods to minimize dv/dt-induced and di/dt-induced turn-on are provided. Finally, an optimized PCB layout that takes full advantage of fast switching MOSFETs is presented.