The 62Pak IGBT modules employing 1700V SPT++ chip set for 175°C operation
Conference: PCIM Asia 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/28/2016 - 06/30/2016 at Shanghai, China
Proceedings: PCIM Asia 2016
Pages: 7Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Matthias, Sven; Corvasce, Chiara; Mesemanolis, Athanasios; Bayer, Martin; Gustafsson, Emilia; Papadopoulos, Charalampos; Kopta, Arnost; Truessel, Dominik; Schnell, Raffael; Rahimo, Munaf (ABB Switzerland Ltd. Semiconductors, Fabrikstr. 3, 5600 Lenzburg, Switzerland)
In this paper, we present a newly developed 62Pak with optimized IGBT and diode performance for high temperature operations. The latest generation of ABB’s enhanced planar 1700V IGBT (SPT++) has been improved by introducing a new termination concept and silicon design. Diode leakage current at 175deg C has been significantly reduced by introducing the field shielded anode concept while still keeping the same electrical characteristics of the previous soft SPT+ diode platform. All mentioned features enable the development of a 1700V 62Pak module rated at 300A and operating at -40deg C to 175deg C junction temperature range with low losses and high Safe Operating Area (SOA).