The Next Generation High Voltage Package and IGBT/Diode Technologies
Conference: PCIM Asia 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/28/2016 - 06/30/2016 at Shanghai, China
Proceedings: PCIM Asia 2016
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Schnell, Raffael; Matthias, Sven; Rahimo, Munaf; Corvasce, Chiara; Andenna, Maxi; Kopta, Arnost; Hartmann, Samuel; Fischer, Fabian (ABB Switzerland Ltd, Semiconductors, Lenzburg, Switzerland)
In this paper, we introduce the next generation of insulated modules employing the recently developed chip technologies. We provide a brief overview of the Enhanced Trench ET-IGBT (TSPT+) and Field Charge Extraction FCE diode chip-set. The first HiPak modules with the new technologies are rated at 3300V/1800A for the (140x190) mm HiPak2 and 3300V/1200A for the (140x130) mm HiPak1. The new chip-set enables IGBT modules to provide improved levels of electrical performance in terms of low losses, good controllability, high robustness and soft diode recovery. To cover other advances in module and chip technologies, we will also discuss the next generation LinPak module and related chip technologies such as the SPT++ IGBTs.