Cu paste sinter joining for die-attach of high TJ power devices realized by PEG solvent optimization
Conference: PCIM Asia 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/28/2016 - 06/30/2016 at Shanghai, China
Proceedings: PCIM Asia 2016
Pages: 6Language: englishTyp: PDF
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Authors:
Yoshikawa, Hiroki; Nagao, Shijo; Suganuma, Katsuaki (Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, Japan)
Sakaue, Takahiko; Kamikoriyama, Yoichi (Mitsui Mining & Smelting Co., Ltd. Osaki 1-11-1, Shinagawa, Tokyo, Japan)
Sasaki, Takahumi (Hikoshima Smelting Co., Ltd. Hikoshimanishiyamacho 1-1-1, Shimonoseki, Yamaguchi, Japan)
Abstract:
A novel Cu paste sinter joining method is proposed for high TJ semiconductor die-attach useful for packaging of emerging wide-bandgap high-power devices. The paste utilizes polyethylene glycol as a solvent, and optimization in both the preparation and bonding process result in high die-shear strength exceeding 30 MPa. The bonding can be performed at 250 °C in N2 gas, assisted by a slight loading of 0.4 MPa. The obtained high strength in the mild process conditions promises the opportunity of thermally stable die-attach technology required for next generation power device packaging.