Gate-Driver with Full Protection for SiC-MOSFET Modules

Conference: PCIM Asia 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/28/2016 - 06/30/2016 at Shanghai, China

Proceedings: PCIM Asia 2016

Pages: 7Language: englishTyp: PDF

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Fink, Karsten; Volke, Andreas (Power Integrations GmbH, Germany)
Wei, Winson (Power Integrations, China)
Wiesner, Eugen; Thal, Eckhard (Mitsubishi Electric Europe B. V., Germany)

This paper is presenting an advanced method of full protection by the gate driver unit for a SiC-MOSFET module using its sense terminals. The presented test results are including features like an adjustable overcurrent and short-circuit detection together with a Soft Shut Down function and Active Clamping, which is reducing the occurring over-voltage spikes at turn-off actively.