DC behaviour of a non-volatile memristor: part II
Conference: CNNA 2016 - 15th International Workshop on Cellular Nanoscale Networks and their Applications
08/23/2016 - 08/25/2016 at Dresden, Deutschland
Proceedings: CNNA 2016
Pages: 2Language: englishTyp: PDF
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Authors:
Ascoli, A.; Tetzlaff, R. (Institut fur Grundlagen der Elektrotechnik und Elektronik, TU Dresden, Dresden, Germany)
Chua, L. O. (Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA)
Strachan, J. P.; Williams, R. S. (Hewlett Packard Labs, 3000 Hanover Street, Palo Alto, California 94304, USA)
Abstract:
Adopting the system theoretic tools introduced in part I, this paper gains a deep insight into the fading memory effects emerging in a non-volatile memristor under DC inputs. Experimental evidence for the history erase phenomenon is also provided here.