Impact of the Nonlinear Switching Kinetics on Logic Circuits based on Memristive Switching Devices
Conference: CNNA 2016 - 15th International Workshop on Cellular Nanoscale Networks and their Applications
08/23/2016 - 08/25/2016 at Dresden, Deutschland
Proceedings: CNNA 2016
Pages: 2Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Menzel, Stephan (Peter Grünberg Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany & JARA – Fundamentals for Future Information Technology, 52425 Jülich, Germany)
Siemon, Anne; Linn, Eike (Institut für Werkstoffe der Elektrotechnik II (IWE II), RWTH Aachen University, 52074 Aachen, Germany & JARA – Fundamentals for Future Information Technology, 52425 Jülich, Germany)
Redox-based memristive switching devices are potential candidates for future non-volatile memory and logic applications. Different logic-in-memory approaches based on memristive switching device have been suggested, which can implement basic Boolean logic functions and more complex adder functionality. In this work the impact of the nonlinear switching kinetics of the memristive switching devices on the logic-inmemory approaches is discussed. It turns out that the operation conditions need to be carefully adjusted with respect to the nonlinear switching kinetics.