1-D Memristor Networks as Ternary Storage Cells

Conference: CNNA 2016 - 15th International Workshop on Cellular Nanoscale Networks and their Applications
08/23/2016 - 08/25/2016 at Dresden, Deutschland

Proceedings: CNNA 2016

Pages: 2Language: englishTyp: PDF

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Vourkas, Ioannis; Abusleme, Angel (Dept. of Electrical Eng., Pontificia Universidad Católica de Chile, Santiago, Chile)
Sirakoulis, Georgios Ch. (Dept. of Electrical and Computer Eng., Democritus University of Thrace, Xanthi, Greece)
Rubio, Antonio (Dept. of Electronic Eng., Polytechnic University of Catalonia, Barcelona, Spain)

Due to its inherent analog nature, the memristor can store information in a continuous form, being thus well-suited for compact multi-bit memory cell technology. In this context, threshold-type switching devices show great retention and switching speed, but still poor controllability. To this end, in this work we use one-dimensional (1-D) networks of anti-serially connected threshold-type memristors, as means to create voltage-controlled ternary memristive switches (TMS). We demonstrate that the number of memristors and their polarity define the memristance corresponding to the different stored information. We present a simulation-based study of their performance using a threshold-type switching model of bipolar voltage-controlled memristors, and comment on the applied programming-pulse characteristics and the most important device-level properties.