Characterization of 3.3 kV and 6.5 kV SiC MOSFETs
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 5Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Sakaguchi, Takui; Aketa, Masatoshi; Nakamura, Takashi (ROHM Semiconductor GmbH, Germany)
Nakanishi, Masaharu (ROHM Semiconductor, Germany)
Rahimo, Munaf (ABB Switzerland, Switzerland)
Abstract:
Previously our group reported 1700V SiC MOSFET technology and suggested its solution. Over 3.3 kV unipolar SiC devices are also expected to be more efficient than Si based devices while many challenges for widespread adoption of SiC devices still exist. This paper presents static and dynamic characteristics of 3.3 kV and 6.5 kV SiC MOSFETs with RDS(on) of 30 mOmega and 129 mOmega, revealing the effects of 80 % and 75 % switching loss reduction respectively compared with Si IGBTs and diodes. Furthermore avalanche capability of the 3.3 kV MOSFET is demonstrated and achieved avalanche energy of more than 3.2J.