Short-Circuit Robustness of Discrete SiC MOSFETs in Half-Bridge Configuration
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 7Language: englishTyp: PDF
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Authors:
Degrenne, Nicolas; Roy, Anthony; Le Lesle, Johan; David, Erwan; Mollov, Stefan (Mitsubishi Electric R&D Centre Europe, France)
Abstract:
This paper studies the short-circuit robustness of Silicon carbide power MOSFETs in the most commonly-used half-bridge configuration. The energy repartition during short-circuit is inherently unstable and unequal, leading to the failure of one device before the other. The short circuit event before destruction typically lasts 50% longer in half-bridge configuration, compared to single-device short circuits. During non-incremental destructive tests, the failure first manifests by a drain-source short on the device sustaining most of the voltage, and is followed by a gate failure on this device. Incremental destructive tests show after turn-OFF failures.