Design Rules to Adapt the Desaturation Detection for SiC MOSFET Modules
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 8Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Bertelshofer, Teresa; Maerz, Andreas; Bakran, Mark-M. (University of Bayreuth, Germany)
Abstract:
This paper presents an overcurrent and shortcircuit (SC) detection method for high current SiC MOSFET modules adapting the existing desaturation detection (=UCE,desat method), which is state-of-the-art for IGBTs. These adjustments include separate detection paths for hard switching faults (HSF), faults under load (FUL) and overcurrents (OC). It includes preventive gate clamping and soft shut down as well. Test results show a reliable detection and shut down of overcurrents, HSF and FUL while not influencing the normal switching behaviour of the device.