Lifetime Estimation Model of HVIGBT Considering Humidity
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 6Language: englishTyp: PDF
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Authors:
Kitajima, Yumie; Hatori, Kenji; Iura, Shinichi; Nakamura, Keiichi; Kusakabe, Yasutaka; Kurachi, Kazuhiro (Mitsubishi Electric Corporation, Japan)
Wiesner, Eugen (Eckhard Thal, Mitsubishi Electric, Germany)
Abstract:
This paper describes the lifetime estimation model of HVIGBT (High Voltage Insulated Gate Bipolar Transistor) considering humidity. The proposed lifetime estimation model includes humidity acceleration factor derived from THB (Temperature Humidity Bias) tests. The THB tests of HVIGBTs were performed at different humidity and voltage conditions to find the acceleration factors for each parameter. Finally, we estimated the lifetime of HVIGBT with combination of those two parameters in addition to temperature parameter by our new lifetime estimation model. We also found out that humidity has a big impact on HVIGBT lifetime.