Breakdown of Gate Oxide of SiC-MOSFETs and Si-IGBTs under High Temperature and High Gate Voltage
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 8Language: englishTyp: PDF
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Authors:
Beier-Moebius, Menia; Lutz, Josef (Technical University of Chemnitz, Germany)
Abstract:
New results of gate oxide stress tests with the step-by-step increase of the gate voltage are shown for SiC-MOSFETs. In comparison to these results, a similar gate stress test was carried out for Si-IGBTs as well. For both tests, the test temperature was set to 150deg C with the last voltage step leading to the intrinsic breakdown. The test was done for three different manufacturers of SiC-MOSFETs and two different manufacturers of Si-IGBTs. Different breakdown distributions for the different manufacturers of SiC-MOSFETs and IGBTs are shown. Only one manufacturer of SiC-MOSFETs shows a similar breakdown behavior like the IGBTs. For SiC-MOSFETs, a threshold voltage drift after the positive gate bias was found, different for the manufacturers.