A Full SiC Module Operational at 200 °C Junction Realized by a New Fatigue-Free Structure
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 5Language: englishTyp: PDF
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Authors:
Notsu, Hiroshi; Michikoshi, Hisato; Fukuda, Kenji; Michikoshi, Hisato (National Institutee of Advanced Industrial Science and Technology (AIST), Japan)
Ishikawa, Dai; Ejiri, Yoshinori (Hitachi Chemical, Japan)
Hatsukawa, Satoshi (Sumitomo Electric Industries, Japan)
Abstract:
A full-SiC high power density module was successfully developed for 200deg C operation. To get a highly reliable joint structure, the authors focused on keeping the sintered copper joint layer in the elastic region over the component life. The following two factors were essential. One is a thin copper layer sandwiched by a roughly one order thicker SiC chip and an active metal brazed (AMB) substrate. The other is to get the AMB substrate's coefficient of thermal expansion (CTE) close to SiC's CTE by optimizing material thicknesses. The module was confirmed to be healthily operated over 35,000 power cycles at 200deg C junction.